Sign In | Join Free | My tjskl.org.cn
China Guangdong Huixin Electronics Technology Co., Ltd. logo
Guangdong Huixin Electronics Technology Co., Ltd.
Great Wisdom Huixin Innovations Unlimited
Active Member

6 Years
Home > Low Voltage Mosfet >

BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

Product Categories
Guangdong Huixin Electronics Technology Co., Ltd.
Contact Now

BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

Brand Name : Huixin

Model Number : BSS138K

Certification : ISO9001, ISO4001, IATF16949, UL

Place of Origin : China

MOQ : 3000pcs

Price : Negotiable

Payment Terms : T/T, MoneyGram

Supply Ability : 1 billion pieces/ Month

Delivery Time : 4-5Weeks

Packaging Details : 3000pcs / Reel

Type : BSS138K N-Channel

Material : Silicon

Package : SOT-23

Drain-Source Voltage : 50V

Continuous Drain Current : 0.22A

Power Dissipation : 0.35W

MPQ : 3000PCS

Features : Rugged and Reliable

Contact Now

BSS138K N-Channel Enhancement Mode Power MOSFET

FEATURES

1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating:HBM 2300V
2. High power and current handing capability
3. Lead free product is acquired
4. Surface mount package
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 0.22 A
Drain Current-Pulsed (Note 1) IDM 0.88 A
Maximum Power Dissipation PD 0.35 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 50 65 - V
Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - ±110 ±500 nA
VGS=±12V,VDS=0V - ±0.3 ±10 uA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.6 1.1 1.6 V
Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=0.2A - 1.3 3 Ω
VGS=10V, ID=0.22A - 1 2 Ω
Forward Transconductance gFS VDS=10V,ID=0.2A 0.2 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss VDS=25V,VGS=0V, F=1.0MHz - 30 - PF
Output Capacitance Coss - 15 - PF
Reverse Transfer Capacitance Crss - 6 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω - - 5 nS
Turn-on Rise Time tr - - 5 nS
Turn-Off Delay Time td(off) - - 60 nS
Turn-Off Fall Time tf - - 35 nS
Total Gate Charge Qg VDS=25V,ID=0.2A,
VGS=10V		 - - 2.4 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.22A - - 1.3 V
Diode Forward Current (Note 2) IS - - 0.22 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

Product Tags:

0.22A Silicon Power MOSFET

      

0.35W Silicon Power MOSFET

      

BSS138K N Channel MOSFET

      
Quality BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET for sale

BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Guangdong Huixin Electronics Technology Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)
 
You May Like